A SiGe BiCMOS Instrumentation Channel for Extreme Environment Applications

Design of High-Speed SiGe HBT BiCMOS Circuits for Extreme Environment Applications

To my family and friends. iii ACKNOWLEDGEMENTS This research work that I commenced four years ago would not have culminated into this dissertation without the help and constant support of many people. I am grateful to my advisor, Professor John D. Cressler, for providing me with this wonderful and exciting opportunity. His deep love and enthusiasm for research and his passion for life is very i...

Low-noise Circuitry for Extreme Environment Detection Systems Implemented in Sige Bicmos Technology

A High Linearity Low Noise Amplifier in a 0.35μm SiGe BiCMOS for WCDMA Applications

In this paper, a low noise amplifier (LNA) in a 0.35 μm SiGe BiCMOS technology for WCDMA applications is presented. The designed LNA exhibits a noise figure of 1.65 dB and a power gain of 20 dB. Besides, two different base bias circuits are integrated in the LNA. One is a conventional resistor feed circuit, and the other is an active feed circuit. By using the active biasing technique for the b...

A Fully-Manufacturable 0.5μm SiGe BiCMOS Technology for Wireless Power Amplifier Applications

IBM Microelectronics Division, Essex Junction, VT, [email protected] *Ericsson Mobile Platforms AB, Nya Vattentornet, SE-221 83 Lund, Sweden, [email protected] **IBM Microelectronics Division, East Fishkill, NY We present for the first time a fully-manufacturable 0.5μm/3.3V SiGe BiCMOS technology that supports multiple mode (GSM/ PCS/ WCDMA) power amplifier applications, highlighting H...

Realization of a Low Noise Amplifier using 0.35 μm SiGe-BiCMOS Technology for IEEE 802.11a Applications

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